| Specifications
Multicrystalline
Silicon Wafers |
| |
156mm *156mm*200/±30μm |
| |
Crystal
& Material Properties |
|
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|
|
Conductivity Type/ Dopant
|
|
|
|
Carbon
Concentration |
≤5×1016atoms/ cm3 |
| |
|
| Electrical
Properties |
Property |
Specifications |
|
|
Minority
Carrier Life Time |
≥2.0μs |
| |
|
| Geometric
Properties |
Property |
Specifications |
Geometry |
Square |
Tolerance
of the Dimensions (Width/ Length) |
156mm±0.5mm |
Thickness |
200±30μm |
Angle
between Sides |
90°±0.3° |
Chamfer |
Chamfer angle:45°±10° ；Chamfer dimension: 1.5±0.5 mm |
TTV |
≤50μm |
Saw
mark Depth |
≤15μm |
Chips |
Chips visible as silhouette by illumination from the back are not allowed |
Edge chips，corner chips |
Length≤1.5mm；Depth≤1mm；Max.2
places, No V shape |
| |
|
| Surface
Properties |
Property |
Specifications |
| Surface |
As-cut and cleaned, visible contaminations |
| Cracks & Pinholes |
Not allowed |
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|
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